On-going projects

• Development of a New Anode Formation Process by Applying P-Type Epi

• Development of Etching Process for Mesa Structure Formation

• Development of Etched SiC Surface Properties Improvement Process and Carrier Life Improvement Process

• Process Defect Analysis of 10kV SiC Diodes

Korea Electric Power Corporation
(2023.4 ~ 2028.3)

• Conduct convergent research on AI system semiconductors and intelligent sensors, and create new markets.

• Advance core element technologies (microfluidic and biosensors, ultrasonic sensors, semiconductor-based UV sensors, sensor interface analog circuits, AI digital circuits, etc.).

• Development of SiC-based bipolar phototransistors for UV sensors with high gain and low voltage, focusing on process optimization to enhance gain and reduce dark current

Ministry of Science and ICT
(2024.07 ~ 2031.12)

• Industry-Oriented Training Education for Compound Power Semiconductors

• Development and Execution of Advanced Process and Design Projects for Compound Power Semiconductors (SiC Devices, GaN Devices, Application Fields of Power Semiconductor Devices, etc.)

• Industry-Academia Research and Development Projects for Compound Power Semiconductors

Ministry of Trade, Industry and Energy
(2025.03 ~ 2030.02)

• Demand-Linked Technology Development for a 250 kW-Class EV Inverter Based on Localization of Double-Sided Cooled SiC Power Modules

• Analysis of Double-Sided Cooled Module Characteristics and Identification of degradation mechanisms

• Power cycling tests and thermal shock tests

• Measurements and analysis of datasheets for Double-Sided Modules

Ministry of Trade, Industry and Energy
(2025.04 ~ 2028.12)

• Development of Reliable 1.2 kV SiC DMOSFET Process and Device for Electric Vehicles

• SDevelopment of technology for high reliability and low cost of process by optimizing unit process and securing new IP (patent)

SK Keyfoundry
(2025.05 ~ 2027.05)

• Fabrication of ultra-thin gate oxide (< 300 Å) and optimization of POA for high reliability

• Edge termination process development (FLR, MFZ-JTE, RA-JTE) and radiation endurance evaluation

• Implementation of tilted ion implantation and deep junction for breakdown strength enhancement

• Radiation tests (TID/SEE) using gamma, proton, and heavy ions under floating/bias conditions

• Space-grade reliability validation using SiCMOSFETs from mass-production lines

Ministry of Science and ICT
(2025.05 ~ 2030.04)

• Design and fabrication of trench-structured 4.5 kV SiC JBS diodes

• Edge termination region design combining Mesa and JTE structures for high-voltage capability

• Optimization of Schottky metal process recipe through metal property comparison and process condition analysis

• Establishment of a standardized process recipe based on unit process evaluation

• Performance validation of 4.5 kV SiC SBDs through reverse recovery and surge tests

Ministry of Education
(2025.03 ~ 2030.02)