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Power Semiconductor & Wide Bandgap

Wide bandgap semiconductors permit devices to operate at much higher temperatures, voltages, and frequencies – making the power electronic modules using these materials significantly more powerful and energy efficient than those made from conventional semiconductor materials. Harnessing these capabilities can lead to dramatic energy savings in industrial processes, data centers, and consumer devices; increase electric vehicle driving range; and help integrate renewable energy onto the electric grid. 

WBG Semiconductors (e.g. SiC, GaN, Diamond, Ga2O3) Go beyond the Limitations of Silicon-based Components.

The Wider Bandgap of SiC and GaN-based Power Devices Enables:

• High Operating Temperatures, Frequencies and Voltages

• Low Specific On-Resistance (Ron,sp)

• Low Leakage Current and High Breakdown Voltage

• Improved Power Consumption due to Low Conductivity and Power Loss

• High Thermal Conductivity and Miniaturization are Possible

• And Smaller, More Efficient Devices

Applications